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| LAB MECHANICAL DATA Dimensions in mm (inches) 8.51 (0.335) 9.40 (0.370) 7.75 (0.305) 8.51 (0.335) SEME 2N2223A DUAL NPN TRANSISTOR IN TO77 HERMETIC PACKAGE FEATURES 1.02 (0.040) Max. 6.10 (0.240) 6.60 (0.260) * * Silicon Planar Epitaxial NPN Transistor High Rel and Screening Options Available. 12.7 (0.500) Min. 0.41 (0.016) 0.53 (0.021) 5.08 (0.200) 2.54 (0.100) 2.54 (0.100) 3 2 4 5 6 0.74 (0.029) 1.14 (0.045) 1 45 0.71 (0.028) 0.86 (0.034) TO77 METAL PACKAGE PIN 1 - Collector PIN 2 - Base PIN 3 - Emitter PIN 4 - Emitter PIN 5 - Base PIN 6 - Collector ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) VCEO VCER VCBO VEBO IC TJ , Tstg PD PD Collector - Emitter Voltage Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current Operating and Storage Junction Temperature Range Total Device Dissipation Total Device Dissipation @ TA = 25C Derate above 25C @ TC = 25C Derate above 25C 60V 80V 100V 7V 500mA -65 to +200C Per Side Total Device 0.5W 0.6W 2.86mW/C 3.43mW/C 1.6W 3.0W 9.1mW/C 11.4mW/C Prelim. 5/98 Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk LAB ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise stated) Parameter VCER(sus)* V(BR)CBO V(BR)EBO ICBO IEBO SEME 2N2223A Test Conditions RBE 10W IB = 0 IE = 0 IC = 0 TA = 150C IC = 0 VCE = 5V VCE = 5V VCE = 5V IB = 5mA IB = 5mA VCE = 10V VCB = 10V VBE = 0.5V VCB = 5V VCE = 5V Min. 80 60 100 7 Typ. Max. Unit V OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage IC = 100mA IC = 30mA IC = 100mA IE = 100mA VCB = 80V IE = 0 VBE = 5V IC = 10mA Collector - Base Breakdown Voltage Emitter - Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current ON CHARACTERISTICS VCEO(sus)* Collector - Emitter Sustaining Voltage V V V 0.01 15 10 mA nA 15 25 50 150 200 1.2 0.9 V -- hFE VCE(sat) VBE(sat) DC Current Gain Collector - Emitter Saturation Voltage Base - Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS IC = 100mA IC = 10mA IC = 50mA IC = 50mA IC = 50mA f = 20MHz IE = 0 f = 1MHz IC = 0 f = 1MHz IC = 1mA f = 1kHz IC = 1mA f = 1kHz IC = 100mA IC = 100mA IC = 100mA fT Cob Cib hib hfe hoe hFE1/hFE2 Current Gain Bandwidth Product Output Capacitance Input Capacitance Input Impedance Small Signal Current Gain Output Admittance MATCHING CHARACTERISTICS DC Current Gain Ratio 1 Base - Emitter Voltage Differential Base - Emitter Voltage Differential Change Due To Temperature 50 15 85 20 40 30 200 .05 MHz pF pF W -- mmhos VCE = 5V VCE = 5V VCE = 5V 0.9 5.0 1.0 25 -- mV mV/C 1/2VBE1-VBE21/2 D(VBE1-VBE2) DT TA = -55 to +125C * Pulse Test: tp 300ms, d 2%. 1) The lowest hFE reading is taken as hFE1 for this ratio. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 5/98 |
Price & Availability of 2N2223A
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